High Aspect Ratio Glass Substrate Via Fill Technology

Features: High aspect ratio glass via filling technology effectively enhances electrode density and chip stacking efficiency, further advancing semiconductor technology.

Description

In the future, high-performance computing chip packaging will adopt glass substrates to replace silicon interposers or organic substrates. ITRI has developed laser-modified drilling, wet seed layer deposition, and electroplating copper filling technologies to address the issues of slow laser drilling, discontinuous seed layer deposition, and defect-prone copper filling. This technology can produce 6-inch glass through-hole copper-filled substrates with thicknesses ranging from 300 to 800 μm and hole diameters of 30 to 100 μm (AR 10~20). Through this technology, packaging deformation will be reduced, and the demands for finer circuitry and high-frequency/high-speed transmission will be met, further advancing semiconductor technology development.

Dept：Mechanical and Mechatronics Systems Research Laboratories
POC：呂曼寧
Tel：03-5915832
E-mail：mnlu10270@itri.org.tw

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