A Leading International Advanced MRAM Chip Technology and Verification Platform

Features: MRAM with feasibility in memory applications featured in high-speed writing, low read/write energy consumption, low temperature operations, and high density.

Description

ITRI can develop magnetic films with various layer structures and low-damage, no-leakage magnetic multilayer film etching techniques tailored to the needs of different types of MRAM, such as SOT MRAM, VC MRAM, low-temperature STT MRAM, and unipolar MRAM. The achievements of ITRI showcase several new MRAM types that surpass the characteristics of existing standard STT MRAM. These MRAMs demonstrate potential for memory applications with high-speed writing, low writing energy consumption, low reading energy consumption, low-temperature operation, and high density.
The MRAM market has significant growth potential, with future applications including embedded memory for processes below 22nm, high-performance mobile devices, automotive high-reliability MCUs, AI chips, and magnetic sensors.

Dept：Electronic and Optoelectronic System Research Laboratories
POC：葉雲友
Tel：03-5913917
E-mail：cloudfriend@itri.org.tw

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