Compound Semiconductors

6'' 1700V SiC MOSFET wafer

Features
ITRI's silicon carbide power device demonstrates high current, low on-resistance, and appropriate gate threshold voltage.

Description

ITRI’s 1700V silicon carbide power device achieves excellent device characteristics with low on-state resistance and high current through a chip design featuring high-density cell layout and uniform thermal distribution (Ron,sp ≤ 8mW‧cm2)
The technical features are as follows:
  • 1700V 80A SiC MOSFET
  • Device performance
  1. Threshold voltage ：VGS(th) = 3.5 V
  2. Large drain current ：ID = 80 A at Tc = 25°C
  3. Low specific on-resistance：Ron,sp ≤ 8mW‧cm2
 

Dept：Electronic and Optoelectronic System Research Laboratories
POC：陳華茂
Tel：03-5917139
E-mail：Huamao.chen@itri.org.tw
 
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