SiC Power Module for EV Charging Solution

Features: ITRI's silicon carbide power module demonstrates low thermal resistance, and parasitic inductance, impedance. The module has passed automotive-grade AQG 324 reliability test.

Description

ITRI’s 1700V SiC power module is an integrated module packaging design that utilizes a high thermal conductivity ceramic substrate. The design achieves low thermal resistance, parasitic inductance, conduction resistance, and switching loss. In addition to meet international automotive standards for system voltages above 800V, the module is also suitable for onboard chargers and charging stations. In the meantime, the design reduces system operating currents, enhancing overall efficiency.
The technical features are as follows:

1700V/100A SiC MOSFET power module
ITRI’s patented housing and spring design
Thermal resistance (R_th,j-c)≦0.19 K/W (Cu sintering)
Parasitic inductance (L_s)<7 nH
On-state resistance (R_ds(on))<10 mΩ
Passed automotive-grade AQG 324 reliability test

Dept：Electronic and Optoelectronic System Research Laboratories
POC：邱柏凱
Tel：03-5914885
E-mail：KennyChiu@itri.org.tw

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