Compound Semiconductors

SiC Crystal Growth Analysis Platform

Features
Using thermal field simulation of silicon carbide crystal growth and AI data analysis to optimize the growth process, enhance crystal quality, and improve production efficiency.

Description

The silicon carbide crystal growth process is critical for manufacturing high-performance semiconductor materials. Thermal field simulation can accurately calculate the temperature distribution during the crystal growth process, thereby improving crystal quality. By integrating AI data analysis, real-time analysis and optimization of process parameters can be achieved. AI models can predict optimal growth conditions, reducing defects and increasing yield. Additionally, this approach can shorten the production cycle and reduce costs, driving the development of the semiconductor materials industry.
 

Dept:材料與化工研究所
POC:詹皓宇
Tel:(O)03-5916291/(M)0933708011
Email:HaoYuChan@itri.org.tw