High-Purity Semi-Insulating Silicon Carbide (SiC) Powder Technology

Features: High-temperature heat treatment and impurity removal control technology enable simultaneous achievement of purification and grain coarsening in silicon carbide powder synthesis. Coupled with AI simulation to master uniformity of the thermal field during crystal growth processes, this approach eliminates the need for rework and reduces emissions of exhaust gases and waste liquids.

Description

The quality of silicon carbide powder is highly correlated with crystal growth. The Industrial Technology Research Institute (ITRI) has independently developed high-temperature heat field control technology and impurity removal techniques. These advancements enable direct control of silicon carbide powder purity exceeding 5N5, as well as the regulation of grain size from tens of micrometers to 2000 micrometers. It allows adjustment of the α and β phase ratios and nitrogen content, facilitating the production of silicon carbide powders with different characteristics tailored to the requirements of crystal growth applications. By integrating AI and simulation, actual applications of silicon carbide powder in crystal growth are verified, thereby enhancing Taiwan's self-sufficiency in high-grade raw materials.

Dept：材料與化工研究所
POC：徐煜翔；翁雪萍
Tel：(O)06-3636987/(M)0980-115433；(O)06-3636979 /(M)0930-730795
E-mail：shawnhsu@itri.org.tw/sherry.hpw@itri.org.tw

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